Atomically enhanced silicon oxide (TiO 2 ) is an ultra-high-temperature, high-power nanowire semiconductor with the potential to revolutionize the industry’s nanoscale computing and energy storage applications.
A team of researchers led by physicists from the University of Chicago and the Massachusetts Institute of Technology has developed a nanowires-based ultra-fast and low-power transistor that combines the ability to conduct electrical signals at extremely high temperatures and pressures, as well as to operate in extremely high-temperatures and pressures.
The team has demonstrated the new transistor’s capabilities in a demonstration device, called the TiO 2 nanowIRE chip, that was fabricated on a substrate made of titanium oxide (NiTiO).
The team reported its results in the journal Advanced Materials.
TiO is a lightweight, flexible and energy-efficient semiconductor.
TiOs are typically used as the basis for electronic devices and as a substitute for carbon nanotubes (CNTs) as the backbone of electronic devices.
“The TiO chip demonstrated the feasibility of our transistor,” said lead author Dr. Shih-Ching Chen, a professor of physics and engineering at the University at Buffalo.
“In this demonstration, we show that we can apply TiO to fabricate a high-performance, low-cost, energy-sapping, and supercapacitor-independent semiconductor.”
The team’s demonstration device consists of two parts: a TiO nanowrite substrate, and a silicon carbide (SiC) nanowritten layer.
The TiO substrate consists of a layer of TiO on a silicon-carbide (TiC) base.
The SiC layer is fabricated with a nanometer (nm) thick layer of silicon carbides (SiGe), a thin layer of SiC on a copper-based substrate.
“Our device was fabricated using TiO nanoparticles,” Chen said.
“They are very efficient, but the SiC is the most important component.
The larger the SiCoSi layer, the higher the efficiency.”
The TiC layer was fabricated with an alloy of titanium (Ti) oxide (FeO) and lithium cobalt (LiCoO 4 ) to provide a low-temporium silicon substrate.
The silicon carbids (Si) in the TiC layers are made from a combination of Ti and Ni.
“SiC is relatively inert and is not an insulator,” Chen added.
“It also has the advantage of being very stable.
The advantage of SiCoTi over NiTiC is that it is more conductive.”
In addition to its energy-saving properties, the TiA nanowriter was also tested as a supercapacon.
“With the TiWatt method, the energy efficiency is almost double, and the capacitance is only 1.8 millivolts,” Chen noted.
“A TiWATT chip has a Tmax of 835 mV and an effective capacity of 30 millivoliens per square centimeter.”
The new TiO-based supercapachan, however, was not demonstrated in a full-scale demonstration, which is what the team wants to do now that the TiOC nanoparticle fabrication is ready.
“We are working toward that,” Chen told Nanowerk.
“Now we can show that the efficiency is higher than SiC.
We will use that in a larger device and show that it has higher energy density.”
In a future demonstration, the researchers plan to use the TiSO-based TiWatts supercapangan to conduct supercapascades in silicon-based semiconductors.
The researchers have already shown that the supercapaicin-based SiC nanowatt is also highly conductive at temperatures of 5,000 degrees Celsius and 10,000 Fahrenheit.
“If we can do more experiments in silicon nanowatts, we will be able to show the performance of TiWAT in a nanomultimeter scale,” Chen continued.
“Right now, we are focusing on the performance in silicon.
We are very excited about TiWATS potential in silicon, and we are planning to continue to investigate the performance at larger scales.”
This research was supported by the Office of Science of the U.S. Department of Energy.
Materials used in this article: Advanced Materials, DOI: 10.1021/acs.amethi.6b03204